? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 1 of 8 sg650 4 1a output current igbt gate drive optocouple r SG6504-(p/w) /tr rev00 (06/03/2015) 002520 description the SG6504 is an optically coupled 1a output current gate driver, designed to drive most 1200v / 50a igbts and mosfets. it is intended for driving high power igbts and mosfets used in motor control inverter applications. for igbts or mosfets with higher ratings, the SG6504 can be used to drive a discrete power stage which in turn will drive the igbt or mosfet gate. the circuit consists of an infrared input led optically coupled to an integrated circuit which u tilizes a high speed driver. the SG6504 comes in a wide body s0-6 package, available in either a standard toe-to-toe width (9.7mm, order code p) or in a stretched toe-to-toe wi dth (11.5mm, order code w). schematic diagram agency approvals ? ul/c-ul approval - pending ? vde (en60747-5-5) approval - pending applications ? igbt / mosfet gate drives ? ac & brushless dc motor drives ? industrial inverters ? uninterruptable power supplies (ups) ? switch mode power supplies ordering information part number description SG6504-p wide body so-6, standard lead spacing (100/tube) SG6504-w wide body so-6, stretched lead spacing (100/tube) SG6504-(x)tr wide body so-6, tape and reel (1000/reel) features ? high common mode rejection: 25kv/ ? s minimum @ v cm = 1500v ? 1a maximum peak output current ? fast switching speeds o 500ns maximum propagation delay o 300ns maximum propagation delay difference ? i cc =3.5ma maximum supply current ? wide supply voltage (v cc ) range (10v to 30v) ? under voltage lockout protection (uvlo) with hysteresis ? broad temperature pe rformance range (-40c to 100c) ? rail-to-rail output voltage ? high input to output isolation (5kv rms ) ? rohs / pb-free / reach compliant notes: ? suffixes listed above are not included in marking on device for part number identification ? for lead spacing details, reference package dimensions on page 7 ** a 0.1f bypass capacitor must be connected between pins 4 & 6 (v ee & v cc ) C reference note 8 on page 4 truth table (positive logic) led high side low side v o off off on low on on off high SG6504 1 3 5 6 anode cathode v o v cc 4v ee shield 2 do not use
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 2 of 8 SG6504-(p/w) /tr rev00 (06/03/2015) 002520 sg650 4 1a output current igbt gate drive optocouple r parameter symbol min. typ. max. units test conditions fig. notes general maximum ratings storage temperature t st -55 - 125 c operating temperature t a -40 - 100 c isolation voltage v iso 5000 - - v rms supply voltage v cc 0 - 35 v solder temperature C wave (10 sec) t sol - - 260 c 9 total power dissipation p t - - 295 mw input maximum ratings average forward input current i f(avg) - - 25 ma reverse input voltage v r - - 5 v peak transient input current i f(tran) - - 1 a <1 ? s pulse width, 300pps input current (rise / fall time) t r(in) / t f(in) - - 500 ns input power dissipation p i - - 45 mw output maximum ratings high peak output current i oh(peak) 1 - - a 1 low peak output current i ol(peak) 1 - - a 1 output voltage v o - - v cc v output power dissipation p o - - 250 mw total power dissipation p t - - 295 mw absolute maximum ratings, t a = 25c (unless otherwise specified) the values indicated are absolut e stress ratings. functional op eration of the device is not implied at these or any conditions in excess of those defined in electrical characterist ics section of this document. exposure to absolute maximum ratings may cause permanent damag e to the device and ma y adversel y affect reliabilit y . recommended operating conditions the values indicated are recommended for steady, consistent ope ration with optimal performance across the operating temperatur e range. parameter symbol min. typ. max. units test conditions fig. notes recommended specifications operating temperature t a -40 - 100 c supply voltage v cc 10 - 30 v input current (on) i fl(on) 8 - 16 ma input voltage (off) v f(off) -3.0 - 0.8 v
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 3 of 8 SG6504-(p/w) /tr rev00 (06/03/2015) 002520 sg650 4 1a output current igbt gate drive optocouple r electrical characteristics, t a = 25c, v ee = ground and v cc = 10v to 30v (unless otherwise specified) parameter symbol min. typ. max. units test conditions fig. notes input specifications led forward voltage v f 1.2 1.4 1.8 v i f = 10ma led forward voltage temperature coefficient v f / t - -1.24 - mv/c i f = 10ma led reverse voltage bv r 5 - - v i r = 10 ? a input threshold current (low to high) i flh - - 5 ma v o > 5v, i o = 0a input threshold voltage (high to low) v fhl 0.8 - - v v o < 5v, i o = 0a input capacitance c in - 33 - pf f = 1mhz, v f = 0v output specifications high level supply current i cch - - 3.5 ma open v o , i f = 7 to 16ma low level supply current i ccl - - 3.5 ma open v o , v f = -3 to +0.8v high level output current i oh - - -0.8 a v o = (v cc C 2.5v) 1 - - -1.0 v o = (v cc C 15v) low level output current i ol 0.8 - - a v o = (v ee + 2.5v) 1 1.0 - - v o = (v ee + 15v) high level output voltage v oh v cc -0.25 - - v i f = 10ma, i o = -100ma low level output voltage v ol - - v ee +0.25 v i f = 0ma, i o = 100ma isolation specifications withstand insulation test v iso 5000 - - v rh 40-60%, t = 1 min 2,3 input-output resistance r i-o - 10 12 - v i-o = 500v dc 2 input-output capacitance c i-o - 0.9 - pf f =1mhz 2
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 4 of 8 SG6504-(p/w) /tr rev00 (06/03/2015) 002520 sg650 4 1a output current igbt gate drive optocouple r electrical characteristics, continued t a = 25c, v ee = ground and v cc = 30v (unless otherwise specified) parameter symbol min. typ. max. units test conditions fig. notes switching specifications propagation delay time to high output level t plh 100 - 500 ns i f = 7 to 16ma v cc = 10 to 30v v ee = ground rg = 47 cg = 3nf f = 10khz duty cycle = 50% 01 propagation delay time to low output level t phl 100 - 500 pulse width distortion pwd - - 100 propagation delay difference between any two parts pdd -300 - 300 4 output rise time (10 to 90%) t r - 50 - 01 output fall time (90 C 10%) t f - 50 - uvlo turn on delay t uvlo on - 0.8 - ? s i f = 10ma, v o > 5v uvlo turn off delay t uvlo off - 0.6 - ? s i f = 10ma, v o < 5v common mode transient immunity at high level output | cm h | 25 - - kv/ ? s i f = 7 to 16ma v cm = 1000v t a = 25c v cc = 30v 02 5 common mode transient immunity at low level output | cm l | 25 - - kv/ ? s v f = 0v v cm = 1000v t a = 25c v cc = 30v 6 notes 1. maximum pulse width = 10 ? s, maximum duty cycle = 0.2% 2. device is considered a two-terminal device: pins 1, 2, and 3 are shorted together, and pins 4, 5, and 6 are shorted toget her 3. in accordance with ul 1577, each optocoupler is proof test ed by applying an insulation test voltage 5250 v rms for one second (leakage current less than 10 ? a) 4. the difference between t phl and t plh between any two SG6504 devices under the same test conditions 5. common mode transient immuni ty in high stage is the maximu m tolerable negative dv cm /dt on the trailing edge of the common mode impulse signal, v cm , to assure that the output will remain high 6. common mode transient immunity in low stage is the maximum tolerable positive dv cm /dt on the leading edge of the common mode impulse signal, v cm , to assure that the output will remain low 7. pulse width distortion is defined as | t phl C t plh | for any given device 8. it is recommended to place a 1 ? f multi-layer ceramic capacitor across pins 4 and 6. in order t o optimize performance, an additional larger capacitor (>1 ? f) can be placed in parallel. 9. 260c for 10 seconds. refer to the lead free solder reflo w profile for more information
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 5 of 8 SG6504-(p/w) /tr rev00 (06/03/2015) 002520 sg650 4 1a output current igbt gate drive optocouple r SG6504 electrical test circuits, continued figure 01: rise time (t r ), fall time (t f ), and propagation delay times (t plh and t phl ) test circuit & waveforms figure 02: cmr test circuit & waveforms 1 3 5 6 v o > 5v 10khz 50% duty cycle 4 2 500? i f = 7 to 16ma + - + - v cc = 15 to 30v 1 ? f 47? 3nf 1 3 5 6 v o 4 2 500? +- + - v cc = 30v 1 ? f a b v cm = 1000v + - 5v
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 6 of 8 SG6504-(p/w) /tr rev00 (06/03/2015) 002520 sg650 4 1a output current igbt gate drive optocouple r process step description parameter a preheat start temperature (oc) 150oc b preheat finish temperature (oc) 180oc c preheat time (s) 90 - 120s d melting temperature (oc) 230oc e time above melting temperature (s) 30s f peak temperature, at terminal (oc) 260oc g dwell time at peak temperature (s) 10s h cool-down (oc/s) <6oc/s SG6504 solder reflow temperature profile recommendations (1) infrared reflow: refer to the following figure as an example of an optimal tempe rature profile for single occurrence infrared reflow. soldering process should not exceed temperature or time limits expressed herein. surface temperature of device package should not exceed 250oc: a b c d f e g h (2) wave solder: (3) hand solder: maximum temperature: 260oc (at terminal) maximum time: 10s pre-heating: 100 - 150oc (30 - 90s) single occurrence maximum temperature: 350oc (at tip of soldering iron) maximum time: 3s single occurrence
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 7 of 8 SG6504-(p/w) /tr rev00 (06/03/2015) 002520 sg650 4 1a output current igbt gate drive optocouple r SG6504 package dimensions so-6 package stretched lead spacing (-w) note: all dimensions in millimeters [mm] with inches in parenthesis () so-6 package standard lead spacing (-p) note: all dimensions in millimeters [mm] with inches in parenthesis ()
? 2015 solid state optronics ? san jos, ca www.ssousa.com ? +1.408.293.4600 page 8 of 8 SG6504-(p/w) /tr rev00 (06/03/2015) 002520 sg650 4 1a output current igbt gate drive optocouple r solid state optronics (sso) makes no warranti es or representations with regards to the completeness and accuracy of this docume nt. sso reserves the right to make changes to product description, specifications at any time without further notices. sso shall not assume any liability arising out of the application or use of any product or circui t described herein. neither c ircuit patent licenses nor indemnity are expressed or implied. except as specified in sso?s standard te rms & conditions, sso disclaims liability fo r consequential or other damage, and we mak e no other warranty, expressed or implied, including merchantability and fitness for particular use. disclaimer sso does not authorize use of its devices in life support applicat ions wherein failure or malfunction of a device may lead to p ersonal injury or death. users of sso devices in life s upport applications assume all risks of such use and agree to indemnify sso against any a nd all damages resulting from such use. life s upport devices are defined as devices or syst ems which, (a) are intended for surgical i mplant into the body, or (b) support or sustain life, and (c) whose failure to per form when used properly in accordance with instructions for u se can be reasonably expected to result in significant injury to the user, or (d) a critical component of a life support device or system whose failure can be reasonably expected to cause failure of the life support devic e or system, or to affect its safety or effectiveness. life support policy SG6504 package marking sg6xxx yww date code pin 1
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